Magnetically controlled exciton transfer in hybrid quantum-dot–quantum-well nanostructures

V. Laurindo, Jr., Yu. I. Mazur, E. R. Cardozo de Oliveira, B. Alén, M. E. Ware, E. Marega, Jr., Z. Ya. Zhuchenko, G. G. Tarasov, G. E. Marques, M. D. Teodoro, and G. J. Salamo
Phys. Rev. B 100, 035309 – Published 19 July 2019

Abstract

A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs-quantum-dot–InGaAs-quantum-well structures is carried out where we observe an unusual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the quantum-well (QW) PL intensity is observed to increase at the expense of a decrease in the quantum-dot (QD) PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL.

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  • Received 18 February 2019
  • Revised 2 July 2019

DOI:https://doi.org/10.1103/PhysRevB.100.035309

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

V. Laurindo, Jr.1, Yu. I. Mazur2, E. R. Cardozo de Oliveira1, B. Alén3, M. E. Ware2, E. Marega, Jr.4, Z. Ya. Zhuchenko5, G. G. Tarasov5, G. E. Marques1, M. D. Teodoro1,*, and G. J. Salamo2

  • 1Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo, Brazil
  • 2Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 3Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM + CSIC) Isaac Newton, 8, E-28760, Tres Cantos 28760, Madrid, Spain
  • 4Instituto de Física de São Carlos, Universidade de São Paulo, 13.566-590 São Carlos, São Paulo, Brazil
  • 5Institute of Semiconductor Physics, National Academy of Sciences, pr, Nauki 45, Kiev 03028, Ukraine

  • *Corresponding author: mdaldin@df.ufscar.br

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Issue

Vol. 100, Iss. 3 — 15 July 2019

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