Electronic structure of the high-TC ferromagnetic semiconductor (Ga,Fe)Sb: X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies

Shoya Sakamoto, Nguyen Thanh Tu, Yukiharu Takeda, Shin-ichi Fujimori, Pham Nam Hai, Le Duc Anh, Yuki K. Wakabayashi, Goro Shibata, Masafumi Horio, Keisuke Ikeda, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, and Atsushi Fujimori
Phys. Rev. B 100, 035204 – Published 15 July 2019

Abstract

The electronic structure and the magnetism of the ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature TC can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetism is of intrinsic origin. The orbital magnetic moments deduced using XMCD sum rules were found to be large, indicating that there is a considerable 3d6 contribution to the ground state of Fe. From RPES, we observed a strong dispersive Auger peak and nondispersive resonantly enhanced peaks in the valence-band spectra. The latter is a fingerprint of the correlated nature of Fe 3d electrons, whereas the former indicates their itinerant nature. It was also found that the Fe 3d states have a finite contribution to the density of states at the Fermi energy. These states, presumably consisting of majority-spin pd hybridized states or minority-spin e states, would be responsible for the ferromagnetic order in this material.

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  • Received 20 November 2018
  • Revised 11 May 2019

DOI:https://doi.org/10.1103/PhysRevB.100.035204

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shoya Sakamoto1, Nguyen Thanh Tu2, Yukiharu Takeda3, Shin-ichi Fujimori3, Pham Nam Hai4,5, Le Duc Anh2,6, Yuki K. Wakabayashi2, Goro Shibata1, Masafumi Horio1, Keisuke Ikeda1, Yuji Saitoh3, Hiroshi Yamagami3,7, Masaaki Tanaka2,5, and Atsushi Fujimori1

  • 1Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 3Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan
  • 4Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-0033, Japan
  • 5Center for Spintronics Research Network, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 6Institute of Engineering Innovation, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 7Department of Physics, Kyoto Sangyo University, Kyoto 603-8555, Japan

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Issue

Vol. 100, Iss. 3 — 15 July 2019

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