Consequences of self-induced transparency in semiconductors

Manoj Jain, Joel I. Gersten, and Narkis Tzoar
Phys. Rev. B 10, 2474 – Published 15 September 1974
PDFExport Citation

Abstract

Some aspects of self-induced transparency in dispersive systems are studied. In particular we analyze the intensity-dependent reflectivity of a crystal of doped narrow-band-gap semiconductor and find a rather drastic alteration of the reflectivity curve with increased intensity. A numerical investigation is made of pulse propagation across the surface of a slab of semiconductor at frequencies below the ambient plasma frequency. We find that the slab attains transparency at elevated field strengths. Finally, a study of continuous-wave propagation is made.

  • Received 19 November 1973

DOI:https://doi.org/10.1103/PhysRevB.10.2474

©1974 American Physical Society

Authors & Affiliations

Manoj Jain and Joel I. Gersten

  • Department of Physics, City College of the City University of New York, New York, New York 10031

Narkis Tzoar*

  • Department of Physics, Bar-Ilan University, Ramat Gan, Israel

  • *Permanent address: Dept. of Physics, City College of the City University of New York, New York, N. Y. 10031.

References (Subscription Required)

Click to Expand
Issue

Vol. 10, Iss. 6 — 15 September 1974

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×