• Letter

Zinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnO

J. E. Stehr, K. M. Johansen, T. S. Bjørheim, L. Vines, B. G. Svensson, W. M. Chen, and I. A. Buyanova
Phys. Rev. Applied 2, 021001 – Published 22 August 2014
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Abstract

The aluminum–zinc-vacancy (AlZnVZn) complex is identified as one of the dominant defects in Al-containing n-type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated VZn, binding more than 90% of the stable VZn’s generated by the irradiation. It acts as a deep acceptor with the (0/) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n-type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation.

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  • Received 6 May 2014

DOI:https://doi.org/10.1103/PhysRevApplied.2.021001

© 2014 American Physical Society

Authors & Affiliations

J. E. Stehr1,*, K. M. Johansen2, T. S. Bjørheim3, L. Vines2, B. G. Svensson2, W. M. Chen1, and I. A. Buyanova1,†

  • 1Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping, Sweden
  • 2Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway
  • 3Department of Chemistry, Centre for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway

  • *Corresponding author. janst@ifm.liu.se
  • Corresponding author. irb@ifm.liu.se

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Vol. 2, Iss. 2 — August 2014

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