Abstract
The aluminum–zinc-vacancy () complex is identified as one of the dominant defects in Al-containing -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated , binding more than 90% of the stable ’s generated by the irradiation. It acts as a deep acceptor with the () energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation.
- Received 6 May 2014
DOI:https://doi.org/10.1103/PhysRevApplied.2.021001
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