Miniaturization of Josephson Junctions for Digital Superconducting Circuits

I.I. Soloviev, S.V. Bakurskiy, V.I. Ruzhickiy, N.V. Klenov, M.Yu. Kupriyanov, A.A. Golubov, O.V. Skryabina, and V.S. Stolyarov
Phys. Rev. Applied 16, 044060 – Published 29 October 2021
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Abstract

In this work, we briefly overview various options for Josephson junctions, which should be scalable down to nanometer range for utilization in nanoscale digital superconducting technology. Such junctions should possess high values of critical current, Ic, and normal state resistance, RN. Another requirement is the high reproducibility of the junction parameters across a wafer in a fabrication process. We argue that superconductor-normal metal-superconductor (SN-N-NS) Josephson junction of “variable thickness bridge” geometry is a promising choice to meet these requirements. Theoretical analysis of the SN-N-NS junction is performed in the case where the distance between the S electrodes is comparable to the coherence length of the N material. The restriction on the junction geometrical parameters providing the existence of superconductivity in the S electrodes is derived for the current flowing through the junction of an order of Ic. The junction heating, as well as available mechanisms for the heat removal, is analyzed. The obtained results show that a SN-N-NS junction with a high (submillivolt) value of IcRN product can be fabricated from a broadly utilized combination of materials like Nb/Cu using well-established technological processes. The junction area can be scaled down to that of semiconductor transistors fabricated in the frame of a 40-nm process.

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  • Received 28 March 2021
  • Revised 20 July 2021
  • Accepted 27 September 2021

DOI:https://doi.org/10.1103/PhysRevApplied.16.044060

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

I.I. Soloviev1,2,3,*, S.V. Bakurskiy1,3,4, V.I. Ruzhickiy1,2,3, N.V. Klenov1,2,3, M.Yu. Kupriyanov1, A.A. Golubov4,5,†, O.V. Skryabina1,4,6, and V.S. Stolyarov3,4

  • 1Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow 119991, Russia
  • 2Lomonosov Moscow State University, Physics Department, Moscow 119991, Russia
  • 3Dukhov All-Russia Research Institute of Automatics, Moscow 101000, Russia
  • 4Centre for Advanced Mesoscience and Nanotechnology, Moscow Institute of Physics and Technology, State University, Dolgoprudny, Moscow region 141700, Russia
  • 5Faculty of Science and Technology and MESA+ Institute of Nanotechnology, Enschede 7500 AE, Netherlands
  • 6Institute of Solid State Physics RAS, Chernogolovka 142432, Russia

  • *isol@phys.msu.ru
  • a.a.golubov@utwente.nl

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Vol. 16, Iss. 4 — October 2021

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