Abstract
The 5d transition-metal oxides are an intriguing platform to demonstrate efficient charge-to-spin-current conversion due to a unique electronic structure dominated by strong spin-orbit coupling. Here, we report on the stacking-order effect of spin-orbit torque (SOT), spin-Hall magnetoresistance, and magnetic anisotropy in bilayer -5d iridium oxide, . While all and control samples exhibit large dampinglike SOT generation, stemming from the efficient charge-to-spin-current conversion, the magnitude of the SOT is larger in the ( bottom sample than in the ( top one. The fieldlike SOT has an even more significant stacking-order effect, resulting in an opposite sign in the samples in contrast to the same sign in the samples. Furthermore, we observe that the magnetic anisotropy energy density and the anomalous Hall effect are increased in the ( bottom sample, suggesting enhanced interfacial perpendicular magnetic anisotropy. Our findings highlight the significant influence of the stacking order on spin transport and the magnetotransport properties of oxide-ferromagnet systems, providing useful information for the design of SOT devices, including 5d transition-metal oxides.
- Received 24 April 2021
- Revised 1 August 2021
- Accepted 8 September 2021
DOI:https://doi.org/10.1103/PhysRevApplied.16.034039
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