Abstract
Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When is coimplanted with and ions, and the appropriate annealing process is used, one of these centers, which is present at higher concentrations, can be eliminated. Characterization of samples with concentrations of < is limited by the sensitivity of standard electron paramagnetic resonance (EPR) instruments. The collective coupling strength between a superconducting (SC) lumped-element resonator and a -implanted sample at 20 mK is measured to be about 1 MHz, which provides a basis for the characterization of low-concentration -implanted and for future networks of hybrid quantum systems that exchange quantum information over the telecommunication network. Of six known -related EPR centers, only one trigonal center couples to the SC resonator.
- Received 11 February 2021
- Revised 13 May 2021
- Accepted 16 August 2021
DOI:https://doi.org/10.1103/PhysRevApplied.16.034006
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