Coupling of Erbium-Implanted Silicon to a Superconducting Resonator

Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta, Nafsika Theodoropoulou, Ilana Wisby, Kevin P. Homewood, Ben Murdin, Tobias Lindström, and J. David Carey
Phys. Rev. Applied 16, 034006 – Published 2 September 2021
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Abstract

Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different Er centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When Si is coimplanted with 1017cm3 Er and 1020cm3 O ions, and the appropriate annealing process is used, one of these centers, which is present at higher Er concentrations, can be eliminated. Characterization of samples with Er concentrations of <1017cm3 is limited by the sensitivity of standard electron paramagnetic resonance (EPR) instruments. The collective coupling strength between a superconducting (SC) NbN lumped-element resonator and a 1017cm3 Er-implanted Si sample at 20 mK is measured to be about 1 MHz, which provides a basis for the characterization of low-concentration Er-implanted Si and for future networks of hybrid quantum systems that exchange quantum information over the telecommunication network. Of six known Er-related EPR centers, only one trigonal center couples to the SC resonator.

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  • Received 11 February 2021
  • Revised 13 May 2021
  • Accepted 16 August 2021

DOI:https://doi.org/10.1103/PhysRevApplied.16.034006

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mark A. Hughes1,*, Naitik A. Panjwani2,3, Matias Urdampilleta2,4, Nafsika Theodoropoulou1, Ilana Wisby5,6,7, Kevin P. Homewood8,9, Ben Murdin8, Tobias Lindström5, and J. David Carey8,10

  • 1Materials and Physics Research Group, School of Science, Engineering and Environment, University of Salford, Salford M5 4WT, United Kingdom
  • 2London Centre for Nanotechnology, University College London, Gower Place, WC1E 6BT London, United Kingdom
  • 3Berlin Joint EPR Lab, Fachbereich Physik, Freie Universität Berlin, 14195 Berlin, Germany
  • 4Institut Néel-CNRS-UJF-INPG, UPR2940 25 rue des Martyrs BP 166, 38042 Grenoble Cedex 9, France
  • 5National Physical Laboratory, Hampton Road, Teddington TW11 0LW, United Kingdom
  • 6Royal Holloway, University of London, Egham TW20 0EX, United Kingdom
  • 7Oxford Quantum Circuits Ltd., King Charles House 2nd Floor, Park End Street, Oxford, Oxfordshire OX1 1JD, United Kingdom
  • 8Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford GU2 7XH, United Kingdom
  • 9School of Materials Science and Engineering, Hubei University, Wuhan 430062, People’s Republic of China
  • 10Department of Electrical and Electronic Engineering, University of Surrey, Guildford GU2 7XH, United Kingdom

  • *m.a.hughes@salford.ac.uk

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Issue

Vol. 16, Iss. 3 — September 2021

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