Terahertz Generation via Picosecond Spin-to-Charge Conversion in IrMn3/NiFe Heterojunction

Cheng Li, Bin Fang, Like Zhang, Qian Chen, Xiangnan Xie, Nuo Xu, Zhongming Zeng, Zhenyu Wang, Liang Fang, and Tian Jiang
Phys. Rev. Applied 16, 024058 – Published 30 August 2021
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Abstract

Experimental investigations of ultrafast electro-optical properties in magnetic materials manifest their great potential for emerging spintronic optoelectronic devices. Here, using time-resolved terahertz emission spectroscopy, we construct a spintronic terahertz emitter consisting of an IrMn3/NiFe heterojunction. A femtosecond spin current pulse is generated in the thin film of the NiFe layer when it absorbs a femtosecond laser pulse, and then the spin current is converted into a transient charge current by the metallic IrMn3 layer on picosecond timescales. We timely record the terahertz emission associated with this ultrafast conversion process by means of electro-optic sampling. Besides, the spin-to-charge conversion efficiency of the IrMn3/NiFe heterojunction is determined via quantitative analysis of the spin torque ferromagnetic resonance results. We have both optically verified and electrically studied the spin-to-charge conversion of the IrMn3/NiFe heterojunction. Our results enlarge the material choice range of spintronic terahertz emitters, which may promote further investigations of ultrafast spin-to-charge conversion in different heterojunction materials.

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  • Received 26 November 2020
  • Revised 2 July 2021
  • Accepted 12 August 2021

DOI:https://doi.org/10.1103/PhysRevApplied.16.024058

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cheng Li1,†, Bin Fang2,†, Like Zhang3,4,†, Qian Chen3, Xiangnan Xie1, Nuo Xu1, Zhongming Zeng3, Zhenyu Wang5,6, Liang Fang1, and Tian Jiang7,*

  • 1Institute for Quantum Information & State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China
  • 2Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
  • 3Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, China
  • 4College of Electronic and Information Engineering, Wuxi University, Wuxi 214105, China
  • 5National Innovation Institute of Defense Technology, Academy of Military Sciences PLA China, Beijing 100010, China
  • 6Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 7Beijing Institute for Advanced Studies, National University of Defense Technology, 100010, China

  • *tjiang@nudt.edu.cn
  • C.L., B.F. and L.Z. contributed equally to this work.

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Issue

Vol. 16, Iss. 2 — August 2021

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