• Editors' Suggestion

Exploring High-Performance p-Type Transparent Conducting Oxides Based on Electron Correlation in V2O3 Thin Films

L. Hu, M.L. Zhao, S. Liang, D.P. Song, R.H. Wei, X.W. Tang, W.H. Song, J.M. Dai, G. He, C.J. Zhang, X.B. Zhu, and Y.P. Sun
Phys. Rev. Applied 12, 044035 – Published 16 October 2019
PDFHTMLExport Citation

Abstract

Transparent conducting oxides (TCOs) with the functionality of transparency plus conductivity lie at the center of many technological applications. Commonly used TCOs are n-type. However, the performances of p-type TCOs lag far behind their n-type counterparts and the development of high-performance p-type TCOs remains an arduous challenge. The electron correlation due to on-site Coulomb interaction in the correlated metal oxides can not only promote modification of the valence band, which forms the basis for p-type conduction, but also shift the screened plasma energy to below the visible region for enhancing optical transparency. In this paper, the electron correlation is utilized as a key material design parameter to improve the performance of p-type TCOs. This approach is experimentally verified by decreasing electron correlation from Cr2O3 to V2O3, which, despite its high hole concentration (>1022cm3), has low screened plasma energy (approximately 0.97 eV) and significantly boosts the performance through good balance between the electrical conductivity and optical transparency. These results indicate that the strategy of electron correlation engineering paves an effective way for exploring high-performance p-type TCOs in strongly correlated oxides.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
1 More
  • Received 11 June 2019
  • Revised 9 September 2019

DOI:https://doi.org/10.1103/PhysRevApplied.12.044035

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

L. Hu1, M.L. Zhao2, S. Liang3, D.P. Song2, R.H. Wei1, X.W. Tang1, W.H. Song1, J.M. Dai1, G. He3, C.J. Zhang4, X.B. Zhu1,*, and Y.P. Sun1,4,5,†

  • 1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China
  • 2Department of Physics, Jiangsu University of Science and Technology, Zhenjiang 212003, People’s Republic of China
  • 3School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, People’s Republic of China
  • 4High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China
  • 5Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People’s Republic of China

  • *xbzhu@issp.ac.cn
  • ypsun@issp.ac.cn

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 12, Iss. 4 — October 2019

Subject Areas
Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Applied

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×