• Open Access

Photocathode quantum efficiency of ultrathin Cs2Te layers on Nb substrates

Zikri Yusof, Adam Denchfield, Mark Warren, Javier Cardenas, Noah Samuelson, Linda Spentzouris, John Power, and John Zasadzinski
Phys. Rev. Accel. Beams 20, 123401 – Published 14 December 2017

Abstract

The quantum efficiencies (QE) of photocathodes consisting of bulk Nb substrates coated with thin films of Cs2Te are reported. Using the standard recipe for Cs2Te deposition developed for Mo substrates (220 Å Te thickness), a QE11%13% at light wavelength of 248 nm is achieved for the Nb substrates, consistent with that found on Mo. Systematic reduction of the Te thickness for both Mo and Nb substrates reveals a surprisingly high residual QE6% for a Te layer as thin as 15 Å. A phenomenological model based on the Spicer three-step model along with a solution of the Fresnel equations for reflectance, R, leads to a reasonable fit of the thickness dependence of QE and suggests that layers thinner than 15 Å may still have a relatively high QE. Preliminary investigation suggests an increased operational lifetime as well. Such an ultrathin, semiconducting Cs2Te layer may be expected to produce minimal Ohmic losses for rf frequencies 1GHz. The result thus opens the door to the potential development of a Nb (or Nb3Sn) superconducting photocathode with relatively high QE and minimal rf impedance to be used in a superconducting radiofrequency (SRF) photoinjector.

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  • Received 14 March 2017

DOI:https://doi.org/10.1103/PhysRevAccelBeams.20.123401

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

  1. Physical Systems
Accelerators & Beams

Authors & Affiliations

Zikri Yusof1, Adam Denchfield1, Mark Warren1, Javier Cardenas1, Noah Samuelson1, Linda Spentzouris1, John Power2, and John Zasadzinski1

  • 1Department of Physics, Illinois Institute of Technology, 3101 South Dearborn Street, Chicago, Illinois 60616, USA
  • 2High Energy Physics Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

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Vol. 20, Iss. 12 — December 2017

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