Line shapes and time dynamics of the Förster resonances between two Rydberg atoms in a time-varying electric field

E. A. Yakshina, D. B. Tretyakov, I. I. Beterov, V. M. Entin, C. Andreeva, A. Cinins, A. Markovski, Z. Iftikhar, A. Ekers, and I. I. Ryabtsev
Phys. Rev. A 94, 043417 – Published 21 October 2016

Abstract

The observation of the Stark-tuned Förster resonances between Rydberg atoms excited by narrowband cw laser radiation requires usage of a Stark-switching technique in order to excite the atoms first in a fixed electric field and then to induce the interactions in a varied electric field, which is scanned across the Förster resonance. In our experiments with a few cold Rb Rydberg atoms, we have found that the transients at the edges of the electric pulses strongly affect the line shapes of the Förster resonances, since the population transfer at the resonances occurs on a time scale of 100 ns, which is comparable with the duration of the transients. For example, a short-term ringing at a certain frequency causes additional radio-frequency-assisted Förster resonances, while nonsharp edges lead to asymmetry. The intentional application of the radio-frequency field induces transitions between collective states, whose line shape depends on the interaction strengths and time. Spatial averaging over the atom positions in a single interaction volume yields a cusped line shape of the Förster resonance. We present a detailed experimental and theoretical analysis of the line shape and time dynamics of the Stark-tuned Förster resonances Rb(nP3/2)+Rb(nP3/2)Rb(nS1/2)+Rb([n+1]S1/2) for two Rb Rydberg atoms interacting in a time-varying electric field.

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  • Received 17 June 2016
  • Corrected 25 October 2016

DOI:https://doi.org/10.1103/PhysRevA.94.043417

©2016 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & Optical

Corrections

25 October 2016

Erratum

Publisher's Note: Line shapes and time dynamics of the Förster resonances between two Rydberg atoms in a time-varying electric field [Phys. Rev. A 94, 043417 (2016)]

E. A. Yakshina, D. B. Tretyakov, I. I. Beterov, V. M. Entin, C. Andreeva, A. Cinins, A. Markovski, Z. Iftikhar, A. Ekers, and I. I. Ryabtsev
Phys. Rev. A 94, 049906 (2016)

Authors & Affiliations

E. A. Yakshina1,2, D. B. Tretyakov1,2, I. I. Beterov1,2, V. M. Entin1,2, C. Andreeva3,4, A. Cinins4, A. Markovski4,5, Z. Iftikhar6, A. Ekers4,7, and I. I. Ryabtsev1,2,*

  • 1Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia
  • 2Novosibirsk State University, 630090 Novosibirsk, Russia
  • 3Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria
  • 4University of Latvia, LV-1002 Riga, Latvia
  • 5Technical University of Sofia, 1000 Sofia, Bulgaria
  • 6Institut d'Optique, 91127 Palaiseau, France
  • 7King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

  • *ryabtsev@isp.nsc.ru

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Issue

Vol. 94, Iss. 4 — October 2016

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