Ground-state Landé $g$ factors for selected ions along the boron isoelectronic sequence

Landé $g$ factors for the fine-structure $1s^{2}2s^{2}2p{}^{2}P_{1/2}$ and ${}^{2}P_{3/2}$ levels in the boron isoelectronic sequence for selected $Z$ values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.

Figure 1

Relative difference between calculations in multiconfiguration modes $\left(n=2,...,5\right)$ and monoconfiguration mode for (a) level energy splittings $\mathrm{\Delta }E$ and Landé $g$ factors for the (b) ${}^{2}P_{1/2}$ levels and (c) the ${}^{2}P_{3/2}$ levels in selected ions of the B-like isoelectronic sequence.