Entanglement generation between spinor Bose-Einstein condensates using Rydberg excitations

Sandrine Idlas, Luis Domenzain, Robert Spreeuw, and Tim Byrnes
Phys. Rev. A 93, 022319 – Published 12 February 2016

Abstract

We propose an experimental scheme of generating entangled states between two spinor Bose-Einstein condensates (BECs) using Rydberg excitations. Due to the strong interaction between Rydberg atoms, the Rydberg excitation creates an interaction between two closely located BECs. The method is suitable particularly for atom chip and permanent magnetic trap systems, which can create many BECs with an arbitrary two-dimensional geometry. We show two schemes of entangled state generation, based on stimulated Raman adiabatic passage (STIRAP) methods. The first method produces a symmetric state with total Sx spin zero between ground and excited states of the atoms using a single STIRAP pair, while the second produces a NOON state between hyperfine ground states using two STIRAP pairs. We show that despite the additional complexity of the BECs, it is possible to identify the initial and final adiabatic states exactly. We verify our theoretical predictions using numerical simulations on small boson number systems.

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  • Received 20 November 2015
  • Revised 13 January 2016

DOI:https://doi.org/10.1103/PhysRevA.93.022319

©2016 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & Technology

Authors & Affiliations

Sandrine Idlas1,2,3, Luis Domenzain2,4, Robert Spreeuw5, and Tim Byrnes1,2,6

  • 1New York University, 1555 Century Avenue, Pudong, Shanghai 200122, China
  • 2National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan
  • 3KTH, Royal Institute of Technology, Stockholm, Sweden
  • 4Université Pierre et Marie Curie (Paris VI), Sorbonne Universités
  • 5Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, P.O. Box 94485 1090 GL Amsterdam, The Netherlands
  • 6NYU-ECNU Institute of Physics at NYU Shanghai, 3663 Zhongshan Road North, Shanghai 200062, China

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Issue

Vol. 93, Iss. 2 — February 2016

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