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Precision measurement of the electron affinity of niobium

Zhihong Luo, Xiaolin Chen, Jiaming Li, and Chuangang Ning
Phys. Rev. A 93, 020501(R) – Published 17 February 2016

Abstract

Due to the low cross section of p-wave threshold photodetachment and the complicated electronic structures, the uncertainty of electron affinities for many transition elements still remains around 10 meV, which has not been improved for three decades. In this study, the electron affinity of Nb is measured as 917.40(6) meV or 7399.35(50)cm1 using the slow electron velocity imaging method. The accuracy was improved by a factor of more than 400 with respect to the previous measurement. Furthermore, the fine structures of Nb were successfully resolved: 16.87(12) meV (5D1), 46.75(12) meV (5D2), 86.85(12) meV (5D3), and 156.00(37) meV (5D4) above the ground 5D0, respectively.

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  • Received 4 November 2015

DOI:https://doi.org/10.1103/PhysRevA.93.020501

©2016 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & Optical

Authors & Affiliations

Zhihong Luo1, Xiaolin Chen1, Jiaming Li1, and Chuangang Ning1,2,*

  • 1Department of Physics, State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 10084, China
  • 2Collaborative Innovation Center of Quantum Matter, Beijing, China

  • *ningcg@tsinghua.edu.cn

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Issue

Vol. 93, Iss. 2 — February 2016

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