Lossless Kerr-phase gate in a quantum-well system via tunneling interference effect for weak fields

Y. L. Shi, Y. C. Huang, J. X. Wu, C. J. Zhu, J. P. Xu, and Y. P. Yang
Phys. Rev. A 91, 063838 – Published 29 June 2015

Abstract

We examine a lossless Kerr-phase gate in a semiconductor quantum-well system via the tunneling interference effect for weak fields. We show that there exists a magic detuning for the signal field, at which the absorption or amplification for the probe field can be eliminated by increasing the tunneling interference effect. Simultaneously, the probe field will acquire a π phase shift at the exit of the medium. We demonstrate with numerical simulations that a lossless Kerr-phase gate is achieved, which may result in many applications in information science and telecommunication.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 29 April 2015

DOI:https://doi.org/10.1103/PhysRevA.91.063838

©2015 American Physical Society

Authors & Affiliations

Y. L. Shi1, Y. C. Huang1, J. X. Wu1, C. J. Zhu1,2,*, J. P. Xu1,2, and Y. P. Yang1,2

  • 1School of Physics, Science and Engineering, Tongji University, Shanghai 200092, China
  • 2MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics, Science and Engineering, Tongji University, Shanghai 200092, China

  • *cjzhu@tongji.edu.cn

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 6 — June 2015

Reuse & Permissions
Access Options
CHORUS

Article Available via CHORUS

Download Accepted Manuscript
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review A

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×