Simple trapped-ion architecture for high-fidelity Toffoli gates

Massimo Borrelli, Laura Mazzola, Mauro Paternostro, and Sabrina Maniscalco
Phys. Rev. A 84, 012314 – Published 13 July 2011

Abstract

We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

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  • Received 15 December 2010

DOI:https://doi.org/10.1103/PhysRevA.84.012314

© 2011 American Physical Society

Authors & Affiliations

Massimo Borrelli1, Laura Mazzola2,3, Mauro Paternostro3, and Sabrina Maniscalco1,2

  • 1CM-DTC, SUPA, EPS/School of Engineering & Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
  • 2Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto, Finland
  • 3School of Mathematics and Physics, Queen’s University, BT7 1NN Belfast, United Kingdom

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Issue

Vol. 84, Iss. 1 — July 2011

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