Prospects for Doppler cooling of three-electronic-level molecules

J. H. V. Nguyen and B. Odom
Phys. Rev. A 83, 053404 – Published 4 May 2011

Abstract

Analogous to the extension of laser cooling techniques from two-level to three-level atoms, Doppler cooling of molecules with an intermediate electronic state is considered. In particular, we use a rate-equation approach to simulate cooling of SiO+, in which population buildup in the intermediate state is prevented by its short lifetime. We determine that Doppler cooling of SiO+ can be accomplished without optically repumping from the intermediate state, at the cost of causing undesirable parity flips and rotational diffusion. Since the necessary repumping would require a large number of continuous-wave lasers, optical pulse shaping of a femtosecond laser is proposed as an attractive alternative. Other candidate three-electron-level molecules are also discussed.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 4 January 2011

DOI:https://doi.org/10.1103/PhysRevA.83.053404

©2011 American Physical Society

Authors & Affiliations

J. H. V. Nguyen and B. Odom

  • Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 83, Iss. 5 — May 2011

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review A

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×