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Ultrafast studies of electronic processes at surfaces using the laser-assisted photoelectric effect with long-wavelength dressing light

L. Miaja-Avila, J. Yin, S. Backus, G. Saathoff, M. Aeschlimann, M. M. Murnane, and H. C. Kapteyn
Phys. Rev. A 79, 030901(R) – Published 30 March 2009

Abstract

We show that ultrafast surface science studies using the laser-assisted photoelectric effect can benefit from longer-wavelength infrared dressing beams. We compare soft-x-ray photoemission from a Pt(111) surface dressed by 1300 and 780 nm light. Using 1300 nm light, the amplitude of the laser-assisted photoelectric signal is enhanced sevenfold compared with 780 nm. This allows lower dressing laser intensity to be used, which dramatically suppresses undesirable processes such as above-threshold photoemission, desorption, and distortion of the photoemission spectrum due to space charge. This work enables ultrafast studies of surface-adsorbate systems and attosecond electron dynamics over a wider energy range.

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  • Received 22 December 2008

DOI:https://doi.org/10.1103/PhysRevA.79.030901

©2009 American Physical Society

Authors & Affiliations

L. Miaja-Avila1,*, J. Yin1, S. Backus1, G. Saathoff2, M. Aeschlimann3, M. M. Murnane1, and H. C. Kapteyn1

  • 1JILA, University of Colorado, Boulder, Colorado 80309-0440, USA
  • 2Max-Planck-Institute of Quantum Optics, Garching 85748, Germany
  • 3Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, 67663 Kaiserslautern, Germany

  • *Luis.Miaja-Avila@colorado.edu

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Vol. 79, Iss. 3 — March 2009

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