Square-wave switching by crossed-polarization gain modulation in vertical-cavity semiconductor lasers

J. Mulet, M. Giudici, J. Javaloyes, and S. Balle
Phys. Rev. A 76, 043801 – Published 1 October 2007

Abstract

We study experimentally and theoretically the effects of crossed-polarization reinjection (XPR) on the output characteristics of a vertical-cavity semiconductor laser. We find a set of parameters values for which each polarization component develops a square-wave modulation at a period close to twice the reinjection delay. We analyze the regularity of this modulation in terms of the laser pumping current and of the reinjection level. These observations are numerically reproduced within the spin-flip model modified to account for XPR. In particular, the degradation of the square-wave switching is linked to the finite value of the spin-flip rate, and it occurs when the current approaches the boundaries of polarization bistability.

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  • Received 9 March 2007

DOI:https://doi.org/10.1103/PhysRevA.76.043801

©2007 American Physical Society

Authors & Affiliations

J. Mulet, M. Giudici*, J. Javaloyes, and S. Balle

  • Institut Mediterrani d’Estudis Avançats, CSIC UIB, E-07071 Palma de Mallorca, Spain

  • *Permanent address: Institut Non Linéaire de Nice, Université de Nice Sophia Antipolis-Centre National de la Recherche Scientifique, 1361 route des lucioles, F-06560 Valbonne, France

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Issue

Vol. 76, Iss. 4 — October 2007

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