Absolute cross-section measurements for electron-impact single ionization of Si4+ and Si5+

J. S. Thompson and D. C. Gregory
Phys. Rev. A 50, 1377 – Published 1 August 1994
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Abstract

Experimental measurements of absolute cross sections are presented for electron-impact single ionization of Si4+ and Si5+. The incident electron energies range from below threshold to 1500 eV. The measurements were performed using the crossed ion-electron beams apparatus at the Oak Ridge National Laboratory Electron-Cyclotron Resonance Ion-Source Facility. The data are in reasonable agreement with cross sections calculated using the Lotz semiempirical formula. Reduced cross sections for the isoelectronic targets, Si4+ and Ar8+, are compared in order to test classical scaling for direct electron-impact single ionization.

  • Received 23 February 1994

DOI:https://doi.org/10.1103/PhysRevA.50.1377

©1994 American Physical Society

Authors & Affiliations

J. S. Thompson

  • Joint Institute for Laboratory Astrophysics of the University of Colorado and the National Institute for Standards and Technology, Boulder, Colorado 80309-0440

D. C. Gregory

  • Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6372

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Issue

Vol. 50, Iss. 2 — August 1994

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