Microcavity semiconductor laser with enhanced spontaneous emission

Y. Yamamoto, S. Machida, and G. Björk
Phys. Rev. A 44, 657 – Published 1 July 1991
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Abstract

A metal-clad optical waveguide with a semiconductor microcavity structure is proposed to increase the coupling efficiency of spontaneous emission into a lasing mode (spontaneous emission coefficient β) and to increase a total spontaneous emission rate simultaneously. Such a microcavity semiconductor laser with enhanced spontaneous emission has novel characteristics, including high quantum efficiency, low threshold pump rate, broad modulation bandwidth, and intensity noise reduced to below the shot-noise limit (amplitude squeezing).

  • Received 22 August 1990

DOI:https://doi.org/10.1103/PhysRevA.44.657

©1991 American Physical Society

Authors & Affiliations

Y. Yamamoto and S. Machida

  • NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan

G. Björk

  • Department of Microwave Engineering, The Royal Institute of Technology, S-10044, Stockholm, Sweden

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Vol. 44, Iss. 1 — July 1991

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