Experimental demonstration of enhanced violations of Leggett-Garg inequalities in a PT-symmetric trapped-ion qubit

Pengfei Lu, Xinxin Rao, Teng Liu, Yang Liu, Ji Bian, Feng Zhu, and Le Luo
Phys. Rev. A 109, 042205 – Published 8 April 2024

Abstract

The Leggett-Garg inequality (LGI) delineates a boundary between quantum and classical systems. While the temporal quantum correlations represented by LGIs have been extensively investigated in the Hermitian domain, the exploration of LGIs under non-Hermitian conditions remains scarce. Theoretical conjectures posit that nonunitary dynamics could transcend the boundary of LGIs set by Hermitian quantum mechanics, yet its empirical validation is lacking. Here, we demonstrate the enhanced violation of LGIs in a non-Hermitian system of a parity-time (PT)-symmetric trapped-ion qubit. The upper bounds of both the third-order parameter K3 and fourth-order parameter K4 increase with dissipation and can reach the maximum value when the system approaches the exceptional point, where K3=C21+C32C31 is comprising three two-time correlations and K4=C21+C32+C43C41 is comprising four correlations. We also find that the lower bounds of K3 and K4 exhibit distinctive behaviors, where the lower bound of K3 remains constant, but that of K4 depends on the target states and measurement operators. These findings reveal a pronounced correlation between the dissipative nature of a quantum system and its temporal correlations.

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  • Received 15 September 2023
  • Revised 16 January 2024
  • Accepted 5 March 2024

DOI:https://doi.org/10.1103/PhysRevA.109.042205

©2024 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalQuantum Information, Science & Technology

Authors & Affiliations

Pengfei Lu1,*, Xinxin Rao1,*, Teng Liu1, Yang Liu1,2, Ji Bian1, Feng Zhu1,2, and Le Luo1,2,3,4,†

  • 1School of Physics and Astronomy, Sun Yat-Sen University, Zhuhai 519082, China
  • 2Shenzhen Research Institute of Sun Yat-Sen University, Nanshan Shenzhen 518087, China
  • 3Quantum Science Center of Guangdong-HongKong-Macao Greater Bay Area, Shenzhen 518048, China
  • 4State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China

  • *These authors contributed equally to this work.
  • luole5@mail.sysu.edu.cn

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Vol. 109, Iss. 4 — April 2024

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