Entanglement generation via power-of-swap operations between dynamic electron-spin qubits

Hugo V. Lepage, Aleksander A. Lasek, David R. M. Arvidsson-Shukur, and Crispin H. W. Barnes
Phys. Rev. A 101, 022329 – Published 24 February 2020

Abstract

Surface acoustic waves (SAWs) can create moving quantum dots in piezoelectric materials. Here we show how electron-spin qubits located on dynamic quantum dots can be entangled. Previous theoretical and numerical models of quantum-dot entanglement generation have been insufficient to study quantum dynamics in realistic experimental devices. We utilize state-of-the-art graphics processing units to simulate the wave-function dynamics of two electrons carried by a SAW through a two-dimensional semiconductor heterostructure. We build a methodology to implement a power-of-swap gate via the Coulomb interaction. A benefit of the SAW architecture is that it provides a coherent way of transporting the qubits through an electrostatic potential. This architecture allows us to avoid problems associated with fast control pulses and guarantees operation consistency, providing an advantage over static qubits. For interdot barrier heights where the double occupation energy is sufficiently greater than the double-dot hopping energy, we find that parameters based on experiments in GaAs/AlGaAs heterostructures can produce a high-fidelity root-of-swap operation. Our results provide a methodology for a crucial component of dynamic-qubit quantum computing.

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  • Received 28 October 2019
  • Accepted 17 January 2020

DOI:https://doi.org/10.1103/PhysRevA.101.022329

©2020 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & Technology

Authors & Affiliations

Hugo V. Lepage1, Aleksander A. Lasek1,2, David R. M. Arvidsson-Shukur1,2,3, and Crispin H. W. Barnes1

  • 1Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom
  • 2Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 3Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

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Issue

Vol. 101, Iss. 2 — February 2020

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