On the Silicon Oxide Bands

L. H. Woods
Phys. Rev. 63, 426 – Published 1 June 1943
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Abstract

Pankhurst has described a band spectrum believed by him to belong to an oxide of silicon, possibly SiO2. A better excitation of the same bands has been obtained from a similar source (a high voltage uncondensed discharge through a constriction in a quartz tube), but in helium gas instead of hydrogen. These bands have been photographed on the 30-foot, 30,000 lines per inch Chicago grating spectrograph. A band near λ3840 has been resolved in the first and second orders and found to be a (0,0) transition, overlapped by a weak (1,1) transition, of the type Σ2Σ2, having the constants {ν(0,0)=26,015.05 cm1,,ν(1,1)=25,991.44cm1,}{B0=0.7180cm1,,B1=0.704cm1,}{B0=0.7253cm1,,B1=0.712cm1.} The coefficients of the spin doubling for the two states are γ0=+0.012 cm1, γ0=+0.002 or γ0=+0.022 cm1, the value of γ0 not certainly fixed as between these two alternatives. The doublet structure and the B values prove that the emitter is SiO+. Other bands at λ4270 have been resolved with weak intensity and tentatively ascribed to SiO2.

  • Received 9 March 1943

DOI:https://doi.org/10.1103/PhysRev.63.426

©1943 American Physical Society

Authors & Affiliations

L. H. Woods

  • Ryerson Physical Laboratory, University of Chicago, Chicago, Illinois

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Issue

Vol. 63, Iss. 11-12 — June 1943

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