Abstract
Approximate ground-state wave functions for effective-mass impurity centers of arbitrary binding energy are derived by the quantum-defect method and applied to calculate optical absorption and emission processes involving impurities in semiconductors. The dependences of band-impurity and impurity-ionization cross sections on impurity binding energy are calculated and shown to limit to those of the hydrogenic model and Lucovsky's -function model for shallow and deep impurity centers, respectively. Formulas relating the cross sections to the absorption coefficients and radiative recombination rates are also presented.
- Received 27 January 1969
DOI:https://doi.org/10.1103/PhysRev.185.1116
©1969 American Physical Society