Abstract
In the absence of any magnetic field, Raman scattering from single-particle intraband electronic excitations in either -type or -type PbTe, PbSe, and PbS has been calculated. Because of the anisotropic many-valleyed Fermi surface and large spin-orbit coupling, it is shown that contributions to the scattering cross section from both charge-density fluctuations and spin-density fluctuations are large in these materials. Numerical values for coefficients occuring in the total scattering amplitude are obtained by considering the band-edge structure near the band gap at the point in the Brillouin zone. An effective interaction Hamiltonian for the scattering process has been derived. The problem of studying the energy distribution of carriers in these materials by using a C laser is discussed. Because of the relatively large value of the band gap, a CO laser is found to be better for PbS.
- Received 19 December 1968
DOI:https://doi.org/10.1103/PhysRev.182.815
©1969 American Physical Society