Warm-Electron Effects in n-Type Silicon and Germanium

M. H. Jørgensen
Phys. Rev. 156, 834 – Published 15 April 1967
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Abstract

The Boltzmann equation describing the warm-electron case is discussed and a review is given of the scattering mechanisms for nGe and nSi with relatively low doping levels. Taking into account the known band structure, the Boltzmann equation is solved by a numerical iteration method under the assumption of weak intervalley scattering. It is shown that this condition can be relaxed for special symmetry directions. The warm-electron coefficient β has been measured in the temperature range from 77 to 250°K by an audio-frequency method based on analysis of nonlinear distortion. Good agreement between measured and calculated results is obtained using the accepted values of the deformation-potential constants.

  • Received 20 October 1966

DOI:https://doi.org/10.1103/PhysRev.156.834

©1967 American Physical Society

Authors & Affiliations

M. H. Jørgensen

  • Physics Laboratory III, The Technical University of Denmark, Lyngby, Denmark

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Issue

Vol. 156, Iss. 3 — April 1967

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