Abstract
The electron Hall mobility has been measured in semiconducting SrTi over the temperature range from 1.6 to 550°K. Electron concentrations in the range from 1× to 2.5× were obtained by reduction or by doping with niobium. The niobium donor centers remain fully ionized down to the lowest temperatures investigated. The low-temperature mobility in niobium-doped SrTi is approximately 4 times larger than in reduced SrTi over the concentration range investigated, and mobility values up to 2.2× /V sec were measured in niobium-doped samples having electron concentrations of approximately 2× . The mobility results are compared with the behavior expected for scattering by ionized defects and polar optical lattice modes at low and high temperatures, respectively.
- Received 18 October 1966
DOI:https://doi.org/10.1103/PhysRev.155.796
©1967 American Physical Society