Abstract
The present investigations of the free-carrier piezobirefringence phenomenon verify that in -type germanium and silicon as well as in -type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high-stress piezobirefringence in these materials provides a direct and independent method for determining deformation-potential constants. For -type germanium we obtain eV, for -type silicon eV; for -type silicon a rather crude analytical approximation yields eV and eV. Finally, experimental evidence is given to support the assumption, that in -type germanium intraband transitions alone cannot account for the free-carrier piezobirefringence.
- Received 2 May 1966
DOI:https://doi.org/10.1103/PhysRev.152.845
©1966 American Physical Society