Hot-Carrier Hall Mobility and Magnetoresistance in $n$-Type Germanium of Large Carrier Concentration

Hot-carrier galvanomagnetic phenomena in $n$-type germanium are studied for the case when the carrier concentration is large enough to ensure a Maxwellian energy distribution, displaced in the momentum space, in each valley. Numerical values of Hall mobility as obtained from the present theory agree quite closely with the earlier theory developed for low carrier concentration. Values of magnetoresistance, however, differ considerably, thus suggesting that a study of hot-carrier magnetoresistance in $n$-type germanium samples of varying carrier concentrations would enable one to find out the critical carrier concentration above which the concept of a displaced Maxwellian energy distribution is valid.