Multiplication in Silicon pn Junctions

John L. Moll
Phys. Rev. 137, A938 – Published 1 February 1965
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Abstract

Multiplication values were measured in the collector junctions of silicon pnp and npn transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values in any of the transistors. The implication is that the electron and hole ionization rates did not change as a result of the addition of extra scattering centers. This result is in direct contradiction to observations of Lee et al. The most likely explanation for the discrepancy is erroneous determination of junction field by Lee et al.

  • Received 17 August 1964

DOI:https://doi.org/10.1103/PhysRev.137.A938

©1965 American Physical Society

Authors & Affiliations

John L. Moll*

  • The Technical University of Denmark, Lundtofte, Lyngby, Denmark

  • *Permanent address: Stanford University, Stanford, California.

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Issue

Vol. 137, Iss. 3A — February 1965

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