Microwave Conductivity of Semiconductors in the Presence of High Steady Electric Fields

B. R. Nag and P. Das
Phys. Rev. 132, 2514 – Published 15 December 1963
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Abstract

The distribution function of carriers in a semiconductor when subjected to a small microwave field and a high steady electric field is derived, considering both the acoustic and optical phonon scattering. Expressions for microwave conductivity and change in apparent dielectric constant are obtained from the distribution function. It is shown by numerical calculations that the conductivity evaluated from these expressions agree closely with the experimental value. The calculated value of the change in apparent dielectric constant, however, is found to be of the same order as the experimental value, but the agreement is poorer than that for the conductivity.

  • Received 19 July 1963

DOI:https://doi.org/10.1103/PhysRev.132.2514

©1963 American Physical Society

Authors & Affiliations

B. R. Nag and P. Das

  • Institute of Radio Physics and Electronics, University of Calcutta, Calcutta, India

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Issue

Vol. 132, Iss. 6 — December 1963

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