Self-Interstitial in Germanium

A. Carvalho, R. Jones, C. Janke, J. P. Goss, P. R. Briddon, J. Coutinho, and S. Öberg
Phys. Rev. Lett. 99, 175502 – Published 26 October 2007

Abstract

Low-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral and an open cage configuration when positively charged. The split configuration is inert while the cage configuration acts as a double donor. We evaluate the migration energies of the defects and show that the theory is able to explain the principal results of low-temperature electron-irradiation experiments.

  • Figure
  • Received 27 April 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.175502

©2007 American Physical Society

Authors & Affiliations

A. Carvalho*, R. Jones, and C. Janke

  • School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, United Kingdom

J. P. Goss and P. R. Briddon

  • School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7RU, United Kingdom

J. Coutinho

  • Department of Physics and 13N, University of Aveiro, 3810 Aveiro, Portugal

S. Öberg

  • Department of Mathematics, Luleå University of Technology, Luleå S-97187, Sweden

  • *carvalho@excc.ex.ac.uk

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Issue

Vol. 99, Iss. 17 — 26 October 2007

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