Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

Frank Glas, Jean-Christophe Harmand, and Gilles Patriarche
Phys. Rev. Lett. 99, 146101 – Published 5 October 2007

Abstract

We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface energies, wurtzite nucleation is favored at high liquid supersaturation. This explains our systematic observation of zinc blende during early growth of gold-catalyzed GaAs nanowires.

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  • Received 30 May 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.146101

©2007 American Physical Society

Authors & Affiliations

Frank Glas*, Jean-Christophe Harmand, and Gilles Patriarche

  • CNRS-Laboratoire de Photonique et de Nanostructures, route de Nozay, 91460 Marcoussis, France

  • *frank.glas@lpn.cnrs.fr

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Issue

Vol. 99, Iss. 14 — 5 October 2007

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