Thermodynamics of Carrier-Mediated Magnetism in Semiconductors

A. G. Petukhov, Igor Žutić, and Steven C. Erwin
Phys. Rev. Lett. 99, 257202 – Published 21 December 2007

Abstract

We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door to the construction of magnetic phase diagrams. As an example, we analyze the stability of a possible reentrant ferromagnetic semiconductor, in which increasing temperature leads to an increased carrier density such that the enhanced exchange coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised.

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  • Received 21 May 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.257202

©2007 American Physical Society

Authors & Affiliations

A. G. Petukhov1, Igor Žutić2, and Steven C. Erwin3

  • 1Department of Physics, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701, USA
  • 2Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260, USA
  • 3Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA

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Issue

Vol. 99, Iss. 25 — 21 December 2007

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