Domain Sensitive Contrast in Photoelectron Emission Microscopy

D. Thien, P. Kury, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, J. van Heys, M. Lindenblatt, and E. Pehlke
Phys. Rev. Lett. 99, 196102 – Published 7 November 2007
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Abstract

We have investigated the adsorption of cesium on the Si(100) surface with photoelectron emission microscopy using linearly polarized green laser light. We observe a polarization dependent contrast between the (2×1) or (1×2) reconstructed terraces. Density-functional calculations reveal the geometric and electronic structure of the Cs/Si(100) surface. The contrast between the (2×1) or (1×2) reconstructed domains is explained on the basis of dipole selection rules for the photoemission matrix elements.

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  • Received 19 January 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.196102

©2007 American Physical Society

Authors & Affiliations

D. Thien*, P. Kury, M. Horn-von Hoegen, and F.-J. Meyer zu Heringdorf

  • Fachbereich Physik und CeNiDE, Universität Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany

J. van Heys, M. Lindenblatt, and E. Pehlke

  • Institut für Theoretische Physik und Astrophysik, Universität Kiel, 24098 Kiel, Germany

  • *dagmar.thien@uni-due.de

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Vol. 99, Iss. 19 — 9 November 2007

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