Coherent Spin Transport through a 350 Micron Thick Silicon Wafer

Biqin Huang, Douwe J. Monsma, and Ian Appelbaum
Phys. Rev. Lett. 99, 177209 – Published 26 October 2007

Abstract

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13π precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

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  • Received 6 June 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.177209

©2007 American Physical Society

Authors & Affiliations

Biqin Huang1,*, Douwe J. Monsma2, and Ian Appelbaum1

  • 1Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware, 19716, USA
  • 2Cambridge NanoTech Inc., Cambridge, Massachusetts 02139, USA

  • *bqhuang@udel.edu

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Issue

Vol. 99, Iss. 17 — 26 October 2007

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