Electronic Structure of Epitaxial Graphene Layers on SiC: Effect of the Substrate

F. Varchon, R. Feng, J. Hass, X. Li, B. Ngoc Nguyen, C. Naud, P. Mallet, J.-Y. Veuillen, C. Berger, E. H. Conrad, and L. Magaud
Phys. Rev. Lett. 99, 126805 – Published 20 September 2007

Abstract

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001¯) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.

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  • Received 27 October 2006

DOI:https://doi.org/10.1103/PhysRevLett.99.126805

©2007 American Physical Society

Authors & Affiliations

F. Varchon1, R. Feng2, J. Hass2, X. Li2, B. Ngoc Nguyen1, C. Naud1, P. Mallet1, J.-Y. Veuillen1, C. Berger1,2, E. H. Conrad2, and L. Magaud1

  • 1Institut Néel, CNRS-UJF, BP 166, 38042 Grenoble Cedex 9, France
  • 2The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA

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Vol. 99, Iss. 12 — 21 September 2007

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