Filling-Factor-Dependent Magnetophonon Resonance in Graphene

M. O. Goerbig, J.-N. Fuchs, K. Kechedzhi, and Vladimir I. Fal’ko
Phys. Rev. Lett. 99, 087402 – Published 23 August 2007; Erratum Phys. Rev. Lett. 103, 179901 (2009)

Abstract

We describe a peculiar fine structure acquired by the in-plane optical phonon at the Γ point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0+, 1 and ,10, at a magnetic field B030T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice vibrations.

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  • Received 9 April 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.087402

©2007 American Physical Society

Erratum

Erratum: Filling-Factor-Dependent Magnetophonon Resonance in Graphene [Phys. Rev. Lett. 99, 087402 (2007)]

M. O. Goerbig, J.-N. Fuchs, K. Kechedzhi, and Vladimir I. Fal’ko
Phys. Rev. Lett. 103, 179901 (2009)

Authors & Affiliations

M. O. Goerbig1, J.-N. Fuchs1, K. Kechedzhi2, and Vladimir I. Fal’ko2

  • 1Laboratoire de Physique des Solides, Université Paris-Sud, CNRS UMR 8502, F-91405 Orsay, France
  • 2Department of Physics, Lancaster University, Lancaster, LA1 4YB, United Kingdom

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Issue

Vol. 99, Iss. 8 — 24 August 2007

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