Comment on “Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2

Frédéric Caupin
Phys. Rev. Lett. 99, 079601 – Published 17 August 2007

Abstract

A Comment on the Letter by Q. Xu et al., Phys. Rev. Lett. 97, 155701 (2006). The authors of the Letter offer a Reply.

  • Received 4 January 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.079601

©2007 American Physical Society

Authors & Affiliations

Frédéric Caupin

  • Laboratoire de Physique Statistique ENS-CNRS-Paris 6-Paris 7 24 rue Lhomond, 75005 Paris, France

Comments & Replies

Xu et al. Reply:

Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, III, D. C. Chrzan, and E. E. Haller
Phys. Rev. Lett. 99, 079602 (2007)

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Original Articles

Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2

Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, III, D. C. Chrzan, and E. E. Haller
Phys. Rev. Lett. 97, 155701 (2006)

Publisher’s Note: Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2 [Phys. Rev. Lett. 97, 155701 (2006)]

Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, III, D. C. Chrzan, and E. E. Haller
Phys. Rev. Lett. 97, 209902 (2006)

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Vol. 99, Iss. 7 — 17 August 2007

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