Nature of Perpendicular-to-Parallel Spin Reorientation in a Mn-doped GaAs Quantum Well: Canting or Phase Separation?

Randy S. Fishman, Fernando A. Reboredo, Alex Brandt, and Juana Moreno
Phys. Rev. Lett. 98, 267203 – Published 27 June 2007

Abstract

It is well known that the magnetic anisotropy in a compressively strained Mn-doped GaAs film changes from perpendicular to parallel with increasing hole concentration p. We study this reorientation transition at T=0 in a quantum well with delta-doped Mn impurities. With increasing p, the angle θ that minimizes the energy E increases continuously from 0 (perpendicular anisotropy) to π/2 (parallel anisotropy) within some range of p. The shape of Emin(p) suggests that the quantum well becomes phase separated with regions containing low hole concentrations and perpendicular moments interspersed with other regions containing high hole concentrations and parallel moments. However, because of the Coulomb energy cost associated with phase separation, the true magnetic state in the transition region is canted with 0<θ<π/2.

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  • Received 8 January 2007

DOI:https://doi.org/10.1103/PhysRevLett.98.267203

©2007 American Physical Society

Authors & Affiliations

Randy S. Fishman1, Fernando A. Reboredo1, Alex Brandt1,2, and Juana Moreno3

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6065, USA
  • 2Department of Physics and Astronomy, Minnesota State University Moorhead, Moorhead, Minnesota 56563, USA
  • 3Physics Department, University of North Dakota, Grand Forks, North Dakota 58202-7129, USA

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Issue

Vol. 98, Iss. 26 — 29 June 2007

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