Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant {111} Facets

Zhenyang Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio
Phys. Rev. Lett. 98, 176102 – Published 23 April 2007

Abstract

Unimodal SiGe islands with dominant {111} facets were grown coherently on pit-patterned Si (001) substrates by molecular beam epitaxy. With increasing Ge deposition, the {111} pyramids evolve from dome-shaped islands, reaching significantly larger volumes than are coherently possible on flat substrates. Finite element calculations and molecular dynamics simulations show that SiGe islands in pits can have less misfit strain with respect to islands of the same shape on flat substrates. The injection of dislocations is thus delayed, allowing for the observed development of coherent islands with a very high aspect ratio.

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  • Received 7 August 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.176102

©2007 American Physical Society

Authors & Affiliations

Zhenyang Zhong1,3, W. Schwinger1, F. Schäffler1, G. Bauer1, G. Vastola2, F. Montalenti2, and L. Miglio2

  • 1Institute for Semiconductor and Solid State Physics, Johannes Kepler University Linz, A-4040 Linz, Austria
  • 2L-NESS and Department of Materials Science, University of Milano Bicocca, Via R. Cozzi 53, 20125 Milano, Italy
  • 3Surface Physics Laboratory, Fudan University, Shanghai 200433, China

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Issue

Vol. 98, Iss. 17 — 27 April 2007

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