Doped Mott Insulator as the Origin of Heavy-Fermion Behavior in LiV2O4

R. Arita, K. Held, A. V. Lukoyanov, and V. I. Anisimov
Phys. Rev. Lett. 98, 166402 – Published 17 April 2007

Abstract

We investigate the electronic structure of LiV2O4, for which heavy-fermion behavior has been observed in various experiments, by the combination of the local density approximation and dynamical mean field theory. To obtain results at zero temperature, we employ the projective quantum Monte Carlo method as an impurity solver. Our results show that the strongly correlated a1g band is a lightly doped Mott insulator which, at low temperatures, shows a sharp (heavy) quasiparticle peak just above the Fermi level, which is consistent with recent photoemission experiments by Shimoyamada et al. [Phys. Rev. Lett. 96, 026403 (2006)].

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  • Received 11 January 2007

DOI:https://doi.org/10.1103/PhysRevLett.98.166402

©2007 American Physical Society

Authors & Affiliations

R. Arita1, K. Held2, A. V. Lukoyanov3, and V. I. Anisimov4

  • 1RIKEN (The Institute of Physical and Chemical Research), Wako, Saitama 351-0198, Japan
  • 2Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart, Germany
  • 3Ural State Technical University-UPI, 620002 Yekaterinburg, Russia
  • 4Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg, Russia

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Vol. 98, Iss. 16 — 20 April 2007

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