Room-Temperature Polariton Lasing in Semiconductor Microcavities

S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 98, 126405 – Published 21 March 2007

Abstract

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29μJcm2, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of ±5° and spatial size around 5μm.

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  • Received 22 September 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.126405

©2007 American Physical Society

Authors & Affiliations

S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, and J. J. Baumberg*

  • School of Physics and Astronomy, University of Southampton, Highfield, Southampton, SO17 1BJ, United Kingdom

G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean

  • École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland

  • *Electronic address: j.j.baumberg@soton.ac.uk

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Vol. 98, Iss. 12 — 23 March 2007

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