Third and Fourth Optical Transitions in Semiconducting Carbon Nanotubes

Paulo T. Araujo, Stephen K. Doorn, Svetlana Kilina, Sergei Tretiak, Erik Einarsson, Shigeo Maruyama, Helio Chacham, Marcos A. Pimenta, and Ado Jorio
Phys. Rev. Lett. 98, 067401 – Published 8 February 2007
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Abstract

We have studied the optical transition energies of single-wall carbon nanotubes over broad diameter (0.7–2.3 nm) and energy (1.26–2.71 eV) ranges, using their radial breathing mode Raman spectra. We establish the diameter and chiral angle dependence of the poorly studied third and fourth optical transitions in semiconducting tubes. Comparative analysis between the higher lying transitions and the first and second transitions show two different diameter scalings. Quantum mechanical calculations explain the result showing strongly bound excitons in the first and second transitions and a delocalized electron wave function in the third transition.

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  • Received 17 May 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.067401

©2007 American Physical Society

Authors & Affiliations

Paulo T. Araujo1, Stephen K. Doorn2, Svetlana Kilina3, Sergei Tretiak3, Erik Einarsson4, Shigeo Maruyama4, Helio Chacham1, Marcos A. Pimenta1, and Ado Jorio1

  • 1Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
  • 2Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 3Theoretical Division and Center for Nonlinear Studies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 4Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

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Issue

Vol. 98, Iss. 6 — 9 February 2007

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