Dilute Moment n-Type Ferromagnetic Semiconductor Li(Zn,Mn)As

J. Mašek, J. Kudrnovský, F. Máca, B. L. Gallagher, R. P. Campion, D. H. Gregory, and T. Jungwirth
Phys. Rev. Lett. 98, 067202 – Published 7 February 2007

Abstract

We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.

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  • Received 6 September 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.067202

©2007 American Physical Society

Authors & Affiliations

J. Mašek1, J. Kudrnovský1, F. Máca1, B. L. Gallagher2, R. P. Campion2, D. H. Gregory3, and T. Jungwirth4,2

  • 1Institute of Physics ASCR, Na Slovance 2, 182 21 Praha 8, Czech Republic
  • 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 3Department of Chemistry, University of Glasgow, Glasgow G12 8QQ, United Kingdom
  • 4Institute of Physics ASCR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic

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Issue

Vol. 98, Iss. 6 — 9 February 2007

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