Alignment of Ge Nanoislands on Si(111) by Ga-Induced Substrate Self-Patterning

Th. Schmidt, J. I. Flege, S. Gangopadhyay, T. Clausen, A. Locatelli, S. Heun, and J. Falta
Phys. Rev. Lett. 98, 066104 – Published 9 February 2007

Abstract

A novel mechanism is described which enables the selective formation of three-dimensional Ge islands. Submonolayer adsorption of Ga on Si(111) at high temperature leads to a self-organized two-dimensional pattern formation by separation of the 7×7 substrate and Ga/Si(111)(3×3)R30° domains. The latter evolve at step edges and domain boundaries of the initial substrate reconstruction. Subsequent Ge deposition results in the growth of 3D islands which are aligned at the boundaries between bare and Ga-covered domains. This result is explained in terms of preferential nucleation conditions due to a modulation of the surface chemical potential.

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  • Received 22 September 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.066104

©2007 American Physical Society

Authors & Affiliations

Th. Schmidt1, J. I. Flege1, S. Gangopadhyay1, T. Clausen1, A. Locatelli2, S. Heun2,*, and J. Falta1

  • 1Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany
  • 2ELETTRA Synchrotron Light Source, Strada Statale 14, 34012 Basovizza, Italy

  • *Present address: TASC-INFM Laboratory, Area di Ricerca, 34012 Basovizza, Italy.

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Vol. 98, Iss. 6 — 9 February 2007

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