Abstract
The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual substrates with is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green’s function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.
- Received 27 July 2006
DOI:https://doi.org/10.1103/PhysRevLett.97.166402
©2006 American Physical Society