Phosphorus Donors in Highly Strained Silicon

Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, and Uwe Gerstmann
Phys. Rev. Lett. 97, 166402 – Published 18 October 2006

Abstract

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si1xGex substrates with x0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green’s function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.

  • Figure
  • Figure
  • Figure
  • Received 27 July 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.166402

©2006 American Physical Society

Authors & Affiliations

Hans Huebl*, Andre R. Stegner, Martin Stutzmann, and Martin S. Brandt

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

Guenther Vogg and Frank Bensch

  • Fraunhofer Institut für Zuverlässigkeit und Mikrointegration IZM, Institutsteil München, Hansastrasse 27d, 80686 München, Germany

Eva Rauls

  • Institut for Fysik og Astronomi, Aarhus Universitet, Ny Munkegade, Bygning 1520, 8000 Aarhus C, Denmark

Uwe Gerstmann

  • Institut de Minéralogie et de Physique des Milieux Condensés, Université Pierre et Marie Curie, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris, France

  • *Corresponding author. Electronic address: huebl@wsi.tum.de

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 97, Iss. 16 — 20 October 2006

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×