Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well

Junya Matsunami, Mitsuaki Ooya, and Tohru Okamoto
Phys. Rev. Lett. 97, 066602 – Published 8 August 2006

Abstract

The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T1.

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  • Received 30 November 2005

DOI:https://doi.org/10.1103/PhysRevLett.97.066602

©2006 American Physical Society

Authors & Affiliations

Junya Matsunami, Mitsuaki Ooya, and Tohru Okamoto

  • Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

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Issue

Vol. 97, Iss. 6 — 11 August 2006

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