What Controls Deposition Rate in Electron-Beam Chemical Vapor Deposition?

William B. White, Konrad Rykaczewski, and Andrei G. Fedorov
Phys. Rev. Lett. 97, 086101 – Published 21 August 2006

Abstract

The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

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  • Received 16 May 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.086101

©2006 American Physical Society

Authors & Affiliations

William B. White, Konrad Rykaczewski, and Andrei G. Fedorov*

  • Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

  • *Corresponding author. Electronic address: andrei.fedorov@me.gatech.edu

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Issue

Vol. 97, Iss. 8 — 25 August 2006

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